The first 40nm-class DDR3 memory module that has low power consumption has been mass produced by Samsung Electronics. It marks as the first in the industry that produce the energy efficient, high density 4GB DDR3 memory capable of saving significant power.
These 4GB DDR3 is optimized to enhance energy-efficiency ratings for servers and was made to comply or even exceed the new Energy Star power consumption specifications. The 4GB ‘Green’ DDR3, which consume a mere 36Watt of power and will significantly save more powers and increase the cost-efficiency of DRAM component for data centers, server systems on high-end notebooks or laptops.
Today, servers are equipped with an average of six registered dual in-line memory module (RDIMMs) sockets per CPU, with which up to a 96GB DRAM capacity can be accommodated. Power consumption varies depending on the component featured.
A module based on 60nm-class 1Gb DDR2 components consumes 210W, while a 40nm-class 2Gb DDR3-based module consumes 55W, representing an approximate 75 percent savings.However, the new 40nm-class 4Gb DDR3-based module consumes a mere 36W, which represents about 83 percent savings over the 60nm-class 1Gb DDR2 module.
With growing concern about energy costs in data centers, these memory power savings translate into an overall reduction in server power of 10 percent per system.
The 4Gb DDR3 raises the small outline dual inline memory module (SoDIMM) density to 8GB.This enables a system level density of up to 16GB for two socket modes, or 32GB for four socket models, which is expected to meet much of the growing demand for high-performance notebooks with advanced graphics.
The new 4Gb DDR3 supports both 1.5V and 1.35V specifications. Available memory modules include 16 and 32GB RDIMMs and 8GB SoDIMMs with a 1.6-Gigabit per second (Gbps) performance rate.
Samsung Electronic’s 40nm 4Gb DDR3-based modules could raise up to two-fold of DRAM density and capable to prolong server life-span.
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