New breakthrough in ultra-thin HIT solar cell with a thickness of 98μm, half the thickness of a conventional high-efficiency solar cell and has achieved the world record for highest-level conversion efficiency of 22.8%.
The energy generation layer which made of crystalline silicon-type photovoltaic cells are going to be thin and cheap, which means reducing the production cost and increase in energy conversion. With crystalline silicon-type photovoltaic cells such as HIT solar cells.
1. High voltage junction technology
The advantage of the HIT solar cell structure is being able to obtain high open-circuit voltage (Voc)*5, while reducing recombination loss*6 of the charged carriers*7, particles of electricity. This is done by depositing high quality amorphous silicon (a-Si) on a substrate surface made of single-crystalline silicon (c-Si), the energy generation layer. With SANYO’s new technology, the voltage has been greatly increased from the previous 0.729 volts to 0.743 volts. This is based on successful discovery of conditions for greatly increasing Voc in a thinner cell, as a result of selecting a structure that places more emphasis on voltage at the time of device design.
2. Improved light trapping effect
In the HIT solar cell, the primary cell material, the silicon wafer, absorbs light and functions as the energy generation layer. Therefore, when trying to make a conventional solar cell thinner, the energy-generating silicon wafer also must become thinner, which decreases the amount of optical absorption, and lowers the short-circuit current (Isc)*8. SANYO succeeded in solving this problem by improving the light trapping effect of the Si wafer. This was achieved with better technology for reducing optical absorption loss in the transparent conductive layer and in the a-Si layer, through optimization of the Si textured surface. The result is a substantial increase for the previous Isc of 37.3 mA/cm2 (SANYO measurement for a cell thickness of 85μm) to 38.8 mA/cm2 in an ultra-thin HIT solar cell with a cell thickness of 98μm.
[ Source ; Press Release ]
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